Effects of Thickness on Resistance Switching Properties of ZnMn₂O₄ Films Deposited by Magnetron Sputtering

Abstract:

ZnMn₂O₄ films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness on I-V characteristics, resistance switching behavior and endurance characteristics of ZnMn₂O₄ films were investigated. The ZnMn₂O₄ films with a structure of Ag/ZnMn₂O₄/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn₂O₄ films from 0.83μm to 2.3μm, both the V_ON and the number of stable repetition switching cycle increase, but the R_HRS/R_LRS ratio decrease, which indicated that the ZnMn₂O₄ films with a thickness of 0.83μm has the biggest R_HRS/R_LRS ratio and the lowest V_ON and V_OFF, but the worst endurance characteristics.

• Periodical: Advanced Materials Research (Volumes 941-944)
• Pages: 1275-1278
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.941-944.1275
• Online since: June 2014
• Authors: Hua Wang, Zhi Da Li, Ji Wen Xu, Yu Pei Zhang, Ling Yang, Wei Qiu
• Keywords: Magnetron Sputtering, Resistance Switching Behavior, Thickness, ZnMn₂O₄

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