Influence of Laser Input Current and Water Jet to Etching Amount of Polycrystalline Si Wafer

Xue Hui Chen; Cheng Zhang; Gen Fu Yuan; Chong Tian Zhang; Yan Sheng Yao

doi:10.4028/www.scientific.net/AMR.941-944.2173

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 941-944Influence of Laser Input Current and Water Jet to...

Influence of Laser Input Current and Water Jet to Etching Amount of Polycrystalline Si Wafer

Abstract:

A water jet assisted laser composite processing device was used to study the influence of the laser input current and low-speed jet to etching amount .It established a empirical formula for relationship between the input current and the etching amount. Tests showed: under certain water speed, as the laser input current increased , the amount of etching was also increased; and when the current was constant, the jet speed was 25.9m/s, the etching amount reached a peak. This test also analyzed the factors that influenced the etching amount of water jets.

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Periodical:

Advanced Materials Research (Volumes 941-944)

Pages:

2173-2177

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.941-944.2173

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Online since:

June 2014

Authors:

Xue Hui Chen*, Cheng Zhang, Gen Fu Yuan, Chong Tian Zhang, Yan Sheng Yao

Keywords:

Etching Amount, Input Current, Jet Speed, Laser Composite Processing

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* - Corresponding Author

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