Carrier Injection in High Gain GaAs Photoconductive Semiconductor Switches

Abstract:

The carrier injection in high gain semi-insulating GaAs photoconductive semiconductor switches (PCSS) is studied. A great quantity of carrier generation in the insulating region of the GaAs PCSS depends upon photo-ionization and impact ionization. The impact ionization avalanche carrier generation exists in the electron avalanche domains (EAD). The EAD is closely related to the growing domains associated with carrier injection. Carriers are injected either at the contacts (Cathode and Anode) or at the tip of the current filaments which works as a “contact reaching further into the gap”. Carrier injection plays an important role for the EAD formation.

• Periodical: Advanced Materials Research (Volumes 941-944)
• Pages: 602-605
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.941-944.602
• Online since: June 2014
• Authors: Li Zheng, Hong Liu*
• Keywords: Carrier Growth, Carrier Injection, Current Filaments, Electron Avalanche Domains (EAD)

References

[1] F. J. Zutavern, A. Mar, G. A. Vawter, S. F. Glover, H. P. Hjalmarson and K. H. Greives, in: Proceedings 19th IEEE International Pulsed Power Conference, San Francisco, CA USA (2013), in press.

DOI: 10.1109/ppc.2013.6627460

[2] Hong Liu, Li Zheng, ChengLi Ruan, Hongjun Yang, Wei Yang and Yonglin Zheng: submitted to Sci Sin-Phys Mech Astron, (2014) (In Chinese).

[3] Hong Liu, Li Zheng, Hongjun Yang, Wei Yang and Yonglin Zheng: submitted to Applied Mechanics and Materials (2013).

[4] Hong Liu, Chengli Ruan and Li Zheng: submitted to Chinese Science Bulletin (2011) (In Chinese).

[5] G. M. Loubriel, F. J. Zutavern, H. P. Hjalmarson, R. R. Gallegos, W. D. Helgeson and M. W. O'Malley: submitted to Appl. Phys. Lett. (1994).

[6] K. H. Schoenbach, J. S. Kenney, F. E. Peterkin and R. J. Allen: submitted to Appl. Phys. Lett. (1993).

[7] C. D. Capps, R. A. Falk and J. C. Adams: submitted to J. Appl. Phys. (1993).

[8] H. Zhao, P. Hadizad, J. H. Hur and M. A. Gundersen: submitted to J. Appl. Phys. (1993).

[9] P. J. Stout and M. J. Kushner: submitted to J. Appl. Phys. (1996).

[10] L. Partain, D. Day and R. Powell: submitted to J. Appl. Phys. (1993).

[11] F. J. Zutavern, A. G. Baca, W. W. Chow, M. J. Hafich, H. P. Hjalmarson, G. M. Loubriel, A. Mar, M. W. O'Malley and G. A. Vawter, in: IEEE Pulsed Power Plasma Science, Las Vegas, NV (2001), in press.

DOI: 10.1109/ppps.2001.961051

[12] Hong Liu and Chengli Ruan: submitted to Acta Optica Sinica (2009) (In Chinese).

[13] J. S. Blakemore: submitted to J. Appl. Phys. (1982).

[14] C. H. Lee: submitted to Appl. Phys. Lett. 1977 30 84.

[15] Minghe Wu, Xiaoming Zheng, Chengli Ruan, Hongchun Yang, Yunqing Sun, Shan Wang, Kedi Zhang, and Hong Liu: submitted to J. Appl. Phys. (2009).

DOI: 10.1109/peits.2009.5406937

[16] H. Kroemer: submitted to IEEE Transactions on Electron Devices ED-14 (1967).

[17] H. W. Thim: submitted to IEEE Transactions on Electron Devices ED-14(1967).

[18] Hong Liu and Chengli Ruan: submitted to Chinese Science Bulletin (2008) (In Chinese).