Electron Avalanche Domains in High Gain Semi-Insulating GaAs Photoconductive Semiconductor Switches

Abstract:

The electron avalanche domains (EAD) in high gain semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSS) are analyzed. The EAD are closely related to the growing domains associated with carrier injection. The EAD formation requires high carrier density and high field impact ionization. The avalanche carrier generation in the EAD can cause and complete the localized direct transform from the N-shaped current-voltage (I-V) characteristics to S-shaped I-V characteristics. Then a transition from the EAD to current filament mechanisms can occur. The EAD ideas can explain the branch and the bend of the filaments during the formation and propagation of the filaments.

• Periodical: Advanced Materials Research (Volumes 941-944)
• Pages: 619-622
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.941-944.619
• Online since: June 2014
• Authors: Hong Liu*, Li Zheng, Wei Yang, Xiao Ling Zhu, Song Hui Dai, Dan Wu, Hong Lian Li
• Keywords: Current Filaments, Electron Avalanche Domains (EAD), GaAs Photoconductive Semiconductor Switch (PCSS), Growing Domain

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