Photoionization in GaAs Photoconductive Semiconductor Switches

Hong Liu; Li Zheng; Wei Yang; Xiao Qian Wang; Song Hui Dai; Xiao Ling Zhu; Hong Jun Yang; Dan Wu

doi:10.4028/www.scientific.net/AMR.941-944.631

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 941-944Photoionization in GaAs Photoconductive...

Photoionization in GaAs Photoconductive Semiconductor Switches

Abstract:

The density distribution characteristics of non-equilibrium carrier from spontaneous emission ahead of the tip of the current filaments in high gain semi-insulating GaAs photoconductive semiconductor switches are analyzed. The results show that the ratio of volume to area of the current filament and the average carrier density in the current filaments are two key factors that affect the photoionization effects of the current filaments. The reabsorption of wavelengths λ ≤ 876 nm radiations plays a dominant role in producing the maximum carrier density. The maximum density of photo-generated carrier is approximately 1~3 orders of magnitude lower than the average density of excess carrier inside the current filaments.

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Periodical:

Advanced Materials Research (Volumes 941-944)

Pages:

631-634

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.941-944.631

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Online since:

June 2014

Authors:

Hong Liu*, Li Zheng, Wei Yang, Xiao Qian Wang, Song Hui Dai, Xiao Ling Zhu, Hong Jun Yang, Dan Wu

Keywords:

Carrier Density Distribution, Current Filaments, GaAs Photoconductive Semiconductor Switch (PCSS), Photoionization Effects

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