Experimental Research on Preparation of SiN Films by Magnetron Sputtering

Zai Yu Zhang; Jian Jun Yang; Yan Hui Wu

doi:10.4028/www.scientific.net/AMR.960-961.208

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 960-961Experimental Research on Preparation of SiN Films...

Experimental Research on Preparation of SiN Films by Magnetron Sputtering

Abstract:

In this paper, the SiN film was deposited on Si wafer, and the deposition rate of the SiN film was discussed with different parameters such as the sputtering power, deposition temperature, deposition pressure and ratio of N₂/(N₂+Ar). The result showed that the optimal parameter for SiN film were 60W, 300°C, 2.5% and 1Pa, respectively.

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Periodical:

Advanced Materials Research (Volumes 960-961)

Pages:

208-211

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.960-961.208

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Online since:

June 2014

Authors:

Zai Yu Zhang, Jian Jun Yang, Yan Hui Wu

Keywords:

Deposition Rate, Magnetron Sputtering, SiN

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References

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