Thermal Transport in Hotspots Using the Lattice Boltzmann Method with Application to Silicon-on-Insulator Transistors

Yu Dong Mao; Ming Tian Xu

doi:10.4028/www.scientific.net/AMR.960-961.337

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 960-961Thermal Transport in Hotspots Using the Lattice...

Thermal Transport in Hotspots Using the Lattice Boltzmann Method with Application to Silicon-on-Insulator Transistors

Abstract:

Silicon-on-insulator (SOI) transistors have been widely used in the micro-electronic devices. The Lattice Boltzmann method (LBM) is employed to simulate the heat conductions of hotspots appeared in a SOI transistor. The results show that a thermal wave effect is appeared in micro-region, and it can not be found in Fourier prediction. Comparing the results obtained by the Fourier law and LBM, we find that the LBM solution shows approximately 22% higher energy density than the Fourier prediction. When two thermal waves form different hotspots meet together, a significant energy enhancement will be appeared.

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Periodical:

Advanced Materials Research (Volumes 960-961)

Pages:

337-340

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.960-961.337

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Online since:

June 2014

Authors:

Yu Dong Mao, Ming Tian Xu*

Keywords:

Hotspots, Lattice Boltzmann Method, Silicon-On-Insulator

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* - Corresponding Author

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