Post-CMP Cleaning of Atom-Scale Planarization Surface of Computer Hard Disk Substrate

Abstract:

At present, the surface of computer hard disk substrate has reached atom-scale planarization after chemical mechanical polishing (CMP). Post-CMP cleaning is one of the key factors influencing the CMP performances. During cleaning, cleaning solution and cleaning methods play a key role in cleaning quality and effectiveness. In the present paper, alkylpolyoxyethylene alcohol carboxylic ester (FAC) surfactant was synthesized and its cleaning performances on atom-scale planarization surface of computer hard disk substrate were investigated. Microscope analysis indicated that the prepared detergent containing FAC surfactant exhibited improved cleaning performances compared with the commercial detergent. Further, inductively coupled plasma (ICP) atomic emission spectrometer, auger electron spectrogram (AES) and atomic force microscopy (AFM) analyses after static corrosion test showed that the prepared cleaning solution had lower corrosion to hard disk substrate.

• Periodical: Advanced Materials Research (Volumes 97-101)
• Pages: 1181-1185
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.97-101.1181
• Online since: March 2010
• Authors: Nai Jing Bu, Hong Lei, Ru Ling Chen, Xiao Li Hu
• Keywords: Atom-Scale Planarization, Chemical Mechanical Polishing (CMP), Cleaning, Corrosion, Hard Disk Substrate

References

[1] H. Han, F. Ryan and M. Mcclure: Surf. Coat. Technol., Vol. 121 (1999), p.579.

[2] Y.Z. Lei, H. Ding and J.B. Luo: Chin. J. Mech. Eng., Vol. 38 (2002), p.1 (in Chinese).

[3] B. Liu: JSME International Journal Ser C, Vol. 48 (2005), p.325.

[4] IDEMA (International Disk Drive Equipment and Materials Association). Disk Drive Technology. IDEMA, 2000: 7~9.

[5] H. Lei, J.B. Luo, X.F. Tu and L. Fang: Chin. J. Mech. Eng., Vol. 41 (2005), p.117 (in Chinese).

[6] H. Lei: Semicond. Technol., Vol. 33 (2008), p.369 (in Chinese).

[7] M. Horn: Solid State Technol., Vol. 34 (1991), p.57.

[8] I. Ali, S.R. Roy and G. Shinn: Solid State Technol., Vol. 34 (1994), p.63.

[9] H. Lei and J.B. Luo: Wear Vol. 257 (2004), p.461.

[10] H. Lei, J.B. Luo and X.C. Lu: Chin. J. Mech. Eng. Vol. 19 (2006), p.496 (in Chinese).

[11] G. Zhang, G. Burdick, F. Dai, T. Bibby and S. Beaudoin: Thin Solid films, Vol. 332 (1998), p.379.

DOI: 10.1016/s0040-6090(98)01038-4

[12] Mcaveyk: Solid State Phenomena, Vol. 76 (2000), p.291.

[13] A. Abbadie, F. Crescente and M.N. Semeria: J. Electrochem. Soc., Vol. 151 (2004), p.57.

[14] H. Park: JJAP, Pt, Vol. 37 (1998), p.3871.

[15] Jolleym: Solid State Phenomena, Vol. 65~66 (1999), p.105.

[16] A. Beverina, H. Bernard, J. Palleau and J. Torres: Electrochem. Solid-State Lett, Vol. 3 (2000), p.156.

[17] W. Fyen, J. Lauerhaas, R. Vos, M. Meuris, P. Mertens and M. Heyns: Solid State Phenomena, Vol. 76~77 (2000), p.39.

DOI: 10.4028/www.scientific.net/ssp.76-77.39

[18] H. Lei: Chin. J. Inorg. Chem., Vol. 25 (2009), p.206 (in Chinese).