Fabrication and Structure Measurement of the Double-Barrier Nano Film Resonant Tunneling Gyroscope

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Abstract:

In this paper, a gyroscope with novel structure is designed and fabricated by the GaAs surface micromaching technology and GaAs bulk micromachining processes technology to achieve an integration of RTD and gyroscope structure. The structure and properties of RTD are tested by Transmission electron microscopy and Aglient 4156C semiconductor analyzer, and then the key parameters of gyroscope are measured by application of Scanning Electron Microscope. The effect of packaged gyroscope is tested by Polytec Micro-system analyzer. The problems in the fabrication process are analyzed and summarized, which have certain reference significance for the further study.

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Advanced Materials Research (Volumes 97-101)

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4225-4229

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March 2010

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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[1] P. See, Member, IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO . 4 (2001).

Google Scholar

[2] Janet L. Pan, J. E. Mcmains, L. Grober and J. M. Woodall, Solid-State Electronics, vol. 48, issue 10-11 (2004), p. (2067).

Google Scholar

[3] Dwight Woolard, Weidong Zhang and Boris Gelmont, Solid-State Electronics, vol. 49 (2005), p.257.

Google Scholar

[4] David Goldhaber-Gordon, Michael S. Montemealo, J. Christopher Love, Gregory J. Opiteck, and James C. Ellenbogen, Proceeding of the IEEE, vol. 85, no. 4 (1997), p.521.

Google Scholar

[5] Wen. T. D, Anastassakis E, Physical. Review. B, Vol. 53, No. 8 (1996), p.4741.

Google Scholar

[6] Fobelets K, Vounckxt R and Borghs G, J. Micromech. Microeng. , 1994, p.123.

Google Scholar

[7] Stephen. A. C: The Science and Engineering of Microelectronic Fabrication (second edition), Oxford University Press, (2001).

Google Scholar

[8] Jianmin Miao, Bernard L Weiss and Hartnagel, J. Micromech. Microeng. 13 (2003), pp.35-39.

Google Scholar

[9] Lalinsky T, Burian E et al. J. Micromech. Microeng, 10 (2000), p.293.

Google Scholar

[10] Zhang Lei, Yang Ruixia, Wu Yibi, Shang Yaohui, and Gao Jinhuan, Electronics Process Technology, Vol. 18 (2007), No. 1, p.31.

Google Scholar

[11] Wang Jianlin, Wang Liangchen, Zeng Yiping, Liu Zhongli, Yang Fuhua, and Bai Yuxia, Chinese Journal of Semiconductors, Vol. 26 (2005), No. 1, p.1.

DOI: 10.1109/icsict.2004.1435088

Google Scholar

[12] D. P. Xu, M. D`Souza, J.C. Shin, L. J. Mawst, and D. Botez, Journal of Crystal Growth, 310 (2008), p.2370.

Google Scholar