Design and Research on a Novel NEMS Accelerated Sensor Based on GaAs PHEMT

Bin Zhen Zhang; Xiao Juan Jia; Jun Liu; Chen Yang Xue; Ting Ting Hou

doi:10.4028/www.scientific.net/AMR.97-101.4221

Paper Titles

A Multiscale Modeling Approach for Carbon Nanotubes
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Error Compensation in One-Point Inclined-Axis Nanogrinding Mode for Small Aspheric Mould
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Synthesis and Photoluminescence Properties of Novel S_nO₂ Zigzag Nanoribbons
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One-Point Nano-Grinding for Micro-Aspherical Glass Lens Mould
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Design and Research on a Novel NEMS Accelerated Sensor Based on GaAs PHEMT
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Fabrication and Structure Measurement of the Double-Barrier Nano Film Resonant Tunneling Gyroscope
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An Improved Thermal Type Microsensor with Thermal Isolation Microcracks
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Application of Pressure Test System in Dispenser for Gasoline
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 97-101Design and Research on a Novel NEMS Accelerated...

Design and Research on a Novel NEMS Accelerated Sensor Based on GaAs PHEMT

Abstract:

A novel nano electro mechanical system (NEMS) accelerated sensor which is based on piezo-resistive effect of GaAs/AlGaAs/InGaAs Pseudomorph-High Electron Mobility Transistor (PHEMT) has been designed and fabricated. The structures of sensor and sensitive element are described in this paper. The main process of Micro-machining is introduced in the text. The static press test has been performed and the testing results show that the NEMS accelerated sensor could sense exterior stress well. Then, a testing circuit is designed to detect the change of drain current under pressure. Through the vibration experiments of the sensor, the sensitivity has been discussed and given out. The conclusion that the sensitivity is maximizing in the saturation region can be got. And the measurement result shows that the sensor has good linearity and high sensitivity with 0.177mV/g in the saturation region.

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Periodical:

Advanced Materials Research (Volumes 97-101)

Pages:

4221-4224

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.97-101.4221

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Online since:

March 2010

Authors:

Bin Zhen Zhang, Xiao Juan Jia, Jun Liu, Chen Yang Xue, Ting Ting Hou

Keywords:

Accelerated Sensor, GaAs, NEMS, PHEMT

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