Microstructural and Electrical Conductivity of Annealed ZnO Thin Films

Abstract:

Undoped nanocrystalline ZnO thin films were deposited onto the glass substrates via the low cost sol-gel dip coating method. The as-grown ZnO films were annealed at the temperatures ranging from 400 °C to 550 °C. The X-ray diffraction (XRD) pattern revealed that the annealed ZnO films were polycrystalline with hexagonal wurtzite structure and majority preferentially grow along (002) c-axis orientation. Atomic force microscopy (AFM) micrographs showed the improvement of RMS roughness and grain size as annealing temperature increased. The ZnO films that annealed at 500 oC exhibited the lowest resistivity value.

• Periodical: Advanced Materials Research (Volume 970)
• Pages: 120-123
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.970.120
• Online since: June 2014
• Authors: Peh Ly Tat*, Karim bin Deraman, Wan Nurulhuda Wan Shamsuri, Rosli Hussin, Zuhairi Ibrahim
• Keywords: Annealing Temperature, Electrical Conductivity, Sol-Gel Dip Coating, ZnO Thin Films

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