Optical Properties of Gallium Nitride Heterostructures Grown on Silicon for Waveguiding Application

Abstract:

Gallium nitride (GaN) on silicon (Si) is governed by the possibility to use this family of semiconductor for novel optoelectronic devices. GaN layers are deposited by MOCVD on silicon Si (111) using AlGaN buffer layer. We have studied the microstructure quality of the films. From SEM, TEM and AFM observations, we have observed that the films exhibit a good quality: the films are highly oriented (0001) with a smooth surface morphology (roughness of 12nm). We have completely characterized the optical properties using the prism coupling technique.

• Periodical: Advanced Materials Research (Volume 980)
• Pages: 41-45
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.980.41
• Online since: June 2014
• Authors: Irma Saraswati*, Arnaud Stolz, S. Ko, Elhadj Dogheche, Nji Raden Poespawati, Retno Wigajatri, Didier Decoster
• Keywords: Gallium Nitride (GaN), Microstructure, Optical Characterizations, Refractive Index, Silicon

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