Microwave Performance Simulation of RF-MEMS Switch

Rui Wu; Ming Xin Song

doi:10.4028/www.scientific.net/AMR.981.564

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 981Microwave Performance Simulation of RF-MEMS Switch

Microwave Performance Simulation of RF-MEMS Switch

Abstract:

This paper presents the calculation model of capacitive RF-MEMS switch for the isolation and insertion loss, and then adopts CST software to simulate microwave performances. The simulation results show that return loss can reach-21.5dB and isolation can reach-0.26dB when the distance between contacting metal and dielectric layer adopts 2ڌ̏̽, 6×10³ڌ̏̽² of contacting area and 20ڌ̏̽ of groove depth.

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Periodical:

Advanced Materials Research (Volume 981)

Pages:

564-567

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.981.564

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Online since:

July 2014

Authors:

Rui Wu*, Ming Xin Song

Keywords:

Microwave Performance, RF-MEMS Switch

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