Study on Slurry of SiC Crystal Substrate (0001) C Surface in CMP Based on Silica Sol (SiO₂ Abrasive)

Abstract:

SiC single crystal substrate has been become an indispensable substrate material in the field of semiconductor lighting. But, there is no report on the commercial slurry of chemical mechanical polishing (CMP) SiC substrate. In this paper, according to orthogonal design, the composition selection and optimization of CMP slurry based on silica sol (SiO₂ abrasive) had been done in CMP SiC crystal substrate (0001) C surface by tests. The CMP slurry based on silica sol for SiC crystal substrate (0001) C surface had been obtained. According to the CMP test results, the material removal rate (MRR) is about 15nm/min and the surface roughness Ra is about 0.2nm.

• Periodical: Advanced Materials Research (Volume 983)
• Pages: 214-217
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.983.214
• Online since: June 2014
• Authors: Zhu Qing Zhang, Hai Feng Cheng, Jian Xiu Su*
• Keywords: Chemical Mechanical Polishing, CMP Slurry, Material Removal Rate (MRR), SiC Crystal Substrate, Surface Roughness (SR)

References

[1] Su Jianxiu, Du Jiaxi, Ma Lijie, et al. J. of Semi. Vol. 33, No. 10 (2012), pp.106003-1~106003-7.

[2] H. Hara, Y. Sano, H. Mimura, et al. J. of Electro. Mater., Vol. 35, No. 8(2006), p. L11-L14.

[3] SU Jianxiu, DU Jiaxi, LIU Xinglong, et al. Adv. Mater. Research, Vol. 497(2012), pp.250-255.

[4] Hojun Lee, Boumyoung Park, Sukhoon Jeong. J. of Ceramic Processing Research. Vol. 10, No. 3 (2009), p.378~381.

[5] Su Jianxiu, Zhang Zhuqing, Yao Jianguo, et al. Adv. Mater. Research, Vol. 797 (2013), pp.261-265.

[6] Jianxiu Su, Zhuqing Zhang, Xinglong Liu, et al. Adv. Mater. Research, Vol. 703 (2013), pp.90-93.