Metal-Semiconductor-Metal Ultraviolet Photodiodes Fabricated on Bulk GaN Substrate

Feng Xie; Guo Feng Yang; Jun Wang; Guo Sheng Wang; Man Song; Tang Lin Wang; Hao Ran Wu; Jin Guo

doi:10.4028/www.scientific.net/AMR.986-987.160

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 986-987Metal-Semiconductor-Metal Ultraviolet Photodiodes...

Metal-Semiconductor-Metal Ultraviolet Photodiodes Fabricated on Bulk GaN Substrate

Abstract:

We report the demonstration of a GaN-based planar metal-semiconductor-metal (MSM) ultraviolet photodetector (PD). The MSM PD with semitransparent interdigitated Schottky electrodes is fabricated on low-defect-density GaN homoepitaxial layer grown on bulk GaN substrate by metal-organic chemical vapor deposition. The dislocation density of the GaN homo-epilayer characterized by cathodoluminescence mapping technique is ~5×10⁶cm⁻². The PD exhibits a low dark current density of ~4.1×10⁻¹⁰ A/cm² and a high UV-to-visible rejection ratio up to 5 orders of magnitude at room temperature under 10 V bias. Even at a high temperature of 425 K, the dark current of the PD at 10 V is still <1×10⁻⁹ A/cm² with a reasonable UV-to-visible rejection ratio more than 3×10⁴, indicating that such kind of PDs are suitable for high temperature operation.

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Periodical:

Advanced Materials Research (Volumes 986-987)

Pages:

160-163

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.986-987.160

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Online since:

July 2014

Authors:

Feng Xie*, Guo Feng Yang, Jun Wang, Guo Sheng Wang, Man Song, Tang Lin Wang, Hao Ran Wu, Jin Guo

Keywords:

GaN, Homoepitaxy, Metal-Semiconductor-Metal, Photodetector

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