The Analysis of Device Model in CMOS Integrated Temperature Sensor

Qi Xiong; Shao Hua Zhou; Jiang Ping Zeng

doi:10.4028/www.scientific.net/AMR.986-987.1600

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 986-987The Analysis of Device Model in CMOS Integrated...

The Analysis of Device Model in CMOS Integrated Temperature Sensor

Abstract:

According to the requirement of the CMOS integrated temperature sensor on the device, we analyzed the sub-threshold model of MOS device and the bipolar device under MOS technology. We found the latter is more suitable for a components of CMOS integrated temperature sensor devices. Therefore, we analyzed the influence of the substrate PNP tube’s piezoelectric effect on temperature sensor and compared different types of resistance that lays a theoretical basis for the design of CMOS integrated temperature sensor.

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Periodical:

Advanced Materials Research (Volumes 986-987)

Pages:

1600-1605

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.986-987.1600

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Online since:

July 2014

Authors:

Qi Xiong, Shao Hua Zhou*, Jiang Ping Zeng

Keywords:

Intergated, Piezoelectric Effect, Resistance, Sub-Threshold Model, Temperature Sensor

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* - Corresponding Author

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