A High-Order CMOS Bandgap Voltage Reference

Qian Neng Zhou; Yun Song Li; Jin Zhao Lin; Hong Juan Li; Chen Li; Yu Pang; Guo Quan Li; Xue Mei Cai; Qi  Li

doi:10.4028/www.scientific.net/AMR.989-994.1165

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 989-994A High-Order CMOS Bandgap Voltage Reference

A High-Order CMOS Bandgap Voltage Reference

Abstract:

A high-order bandgap voltage reference (BGR) is designed by adopting a current which is proportional to absolute temperature T^1.5. The high-order BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the designed high-order BGR achieves temperature coefficient of 2.54ppm/°C when temperature ranging from-55°C to 125°C. The high-order BGR at 10Hz, 100Hz, 1kHz, 10kHz and 100kHz achieves, respectively, the power supply rejection ratio of-64.01dB, -64.01dB, -64dB, -63.5dB and-53.2dB. When power supply voltage changes from 1.7V to 2.5V, the output voltage deviation of BGR is only 617.6μV.

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Periodical:

Advanced Materials Research (Volumes 989-994)

Pages:

1165-1168

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.989-994.1165

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Online since:

July 2014

Authors:

Qian Neng Zhou*, Yun Song Li, Jin Zhao Lin, Hong Juan Li, Chen Li, Yu Pang, Guo Quan Li, Xue Mei Cai, Qi Li

Keywords:

Bandgap Voltage Reference, Power Supply Rejection Ratio, Temperature Coefficient

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