Stress Characterization and Mechanical Analysis for Supporting Leg of SiGe/Si MQWs Based Bolometer

Bo Jiang; Tao Dong; Yong He; Yan Su

doi:10.4028/www.scientific.net/AMR.989-994.2943

Paper Titles

Analysis of Impact of Driving Amplitude on Resonance Frequency of Silicon Microgyroscope
p.2926

Research on Credit Evaluation and Verification Model in Equipment Manufacture Industry
p.2931

The Improvement for the Structure of the Coil Transporters and its FEA
p.2935

The Influence of Diamond Graver’s Edge Radius in Diffraction Grating Scoring Process
p.2939

Stress Characterization and Mechanical Analysis for Supporting Leg of SiGe/Si MQWs Based Bolometer
p.2943

Analysis of Aircraft Hydraulic System Failures
p.2947

Design and Realization of Remote Control UAV’s Flight Controller
p.2951

Study of AT Based on the Lever Method
p.2955

Design and Analysis of Hydraulic Piston Structure Exciter
p.2959

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 989-994Stress Characterization and Mechanical Analysis...

Stress Characterization and Mechanical Analysis for Supporting Leg of SiGe/Si MQWs Based Bolometer

Abstract:

The paper presents an “L-type” leg applied in SiGe/Si Multi Quantum Wells (MQWs) based bolometer. Characterization structure has been designed to take measurement for α-SiNx:H film stress. The displacement of beam endpoint in the structure is 0.48 micron and the interior stress is about 87 MPa totally through generalized Hooke law. Furthermore, the mechanical analysis for SiGe/Si MQWs based bolometer has been taken and the largest stress is about 600 MPa in the calculation. The bolometer SEM photograph is shown at last.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 989-994)

Pages:

2943-2946

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.989-994.2943

Citation:

Cite this paper

Online since:

July 2014

Authors:

Bo Jiang, Tao Dong*, Yong He, Yan Su

Keywords:

Mechanical Analysis, MEMS, Stress Characterization

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] A. Rogalski. Infrared detectors: an overview [J]. Infrared Physics & Technology, vol. 43, pp.187-210, (2002).

DOI: 10.1016/s1350-4495(02)00140-8

Google Scholar

[2] T. Dong, Z. Yang, Q. Bi, et al. Freon R141b flow boiling in silicon microchannel heat sinks: experimental investigation [J]. Heat and Mass Transfer, vol. 44, pp.315-324, (2008).

DOI: 10.1007/s00231-007-0236-9

Google Scholar

[3] S. Eminoglu, M. Y. Tanrikulu and T. Akin. A Low-Cost 128×128 Uncooled Infrared Detector Array in CMOS Process [J]. Journal of Microelectromechanical Systems, vol. 17, p.20, (2008).

DOI: 10.1109/jmems.2007.910235

Google Scholar

[4] L. Zhang and T. Dong. A Si/SiGe quantum well based biosensor for direct analysis of exothermic biochemical reaction [J]. Journal of Micromechanics and Microengineering, vol. 23, p.045011, (2013).

DOI: 10.1088/0960-1317/23/4/045011

Google Scholar

[5] M. Kolahdouz, A. A. Farniya, M. Östling, et al. The performance improvement evaluation for SiGe-based IR detectors [J]. Solid-State Electronics, vol. 62, pp.72-76, (2011).

DOI: 10.1016/j.sse.2011.01.010

Google Scholar

[6] Jiang B, Dong T, Su Y, et al. Epitaxial Growth and Characterization of Self-Doping Si1-xGex/Si Multi-Quantum Well Materials [J]. Journal of Microelectromechanical Systems, vol. 23, pp.213-219, (2014).

DOI: 10.1109/jmems.2013.2269612

Google Scholar

[7] Zhong F, Dong T, Yong H, et al. Void-free wafer-level adhesive bonding utilizing modified poly (diallyl phthalate)[J]. Journal of Micromechanics and Microengineering, 2013, 23(12): 125021.

DOI: 10.1088/0960-1317/23/12/125021

Google Scholar

[8] Duerinckx F, Szlufcik J. Defect passivation of industrial multicrystalline solar cells based on PECVD silicon nitride[J]. Solar Energy Materials and Solar Cells, 2002, 72(1): 231-246.

DOI: 10.1016/s0927-0248(01)00170-2

Google Scholar