Study of Dislocation Densities of Thick GaN Films

Yon Gan Li; Xiang Qian Xiu; Xue Mei Hua; Shi Ying Zhang; Shi Pu Gu; Rong Zhang; Zi Li Xie; Bin Liu; Peng Chen; Ping Han; You Dou Zheng

doi:10.4028/www.scientific.net/AMR.989-994.387

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 989-994Study of Dislocation Densities of Thick GaN Films

Study of Dislocation Densities of Thick GaN Films

Abstract:

The dislocation density of GaN thick films has been measured by high-resolution X-ray diffraction. The results show that both the edge dislocations and the screw dislocation reduce with increasing the GaN thickness. And the edge dislocations have a larger fraction of the total dislocation densities, and the densities for the edge dislocation with increasing thickness reduce less in contrast with those for the screw dislocation.

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Periodical:

Advanced Materials Research (Volumes 989-994)

Pages:

387-390

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.989-994.387

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Online since:

July 2014

Authors:

Yon Gan Li*, Xiang Qian Xiu, Xue Mei Hua, Shi Ying Zhang, Shi Pu Gu, Rong Zhang, Zi Li Xie, Bin Liu, Peng Chen, Ping Han, You Dou Zheng

Keywords:

AFM, Dislocation, GaN, HRXRD, Thickness

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References

[1] YAMADA T, MUKAI T. Jpn. J. Appl. Phys. 34 (1995), p.1332- p.1335.

Google Scholar

[2] Sugahara T, Sato H, Hao M, et al. Japanese journal of applied physics, 1998, 37(4A), p.398.

Google Scholar

[3] Weimann N G, Eastman L F, Doppalapudi D, et al. Journal of Applied Physics, 1998, 83(7), p.3656-p.3659.

Google Scholar

[4] Kozodoy P, Ibbetson J P, Marchand H, et al. Applied physics letters, 1998, 73(7), p.975-p.977.

Google Scholar

[5] OIDA Technology Roadmap, update 2002, J.Y. Tsao (Ed. ), Light Emitting Diodes (LEDs) for General Illumination, Optoelectronics Industry Development Association, Washington, DC.

Google Scholar

[6] Currie M T, Samavedam S B, Langdo T A, et al. Applied Physics Letters, 1998, 72(14), p.1718-p.1720.

Google Scholar

[7] T. S. Zheleva, O. H. Nam, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. APPLAB 0003-6951, 71, 2472 (1997).

Google Scholar

[8] S. Tanaka, M. Takeuchi, and Y. Aoyagi, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922, 39, L831 (1997).

Google Scholar

[9] T. Wang, Y. Morishima, N. Naoi, and S. Sakai, J. Cryst. Growth JCRGAE 0022-0248, 213, 188 (2000).

Google Scholar

[10] X. Q. Shen, H. K. Cho, T. Ide, M. Shimizu, and H. Okumura, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922, 41, L1428 (2002).

Google Scholar

[11] T. Akasaka, T. Nishida, Y. Taniyasu, M. Kasu, T. Makimoto, and N. Kobayashi, Appl. Phys. Lett. APPLAB 0003-6951 , 83, 4140 (2003).

DOI: 10.1063/1.1628397

Google Scholar

[12] N. Kuwano, T. Tsuruda, S. Terao, S. Kamiyama, H. Amano and I. Akasaki, International Scholarly Research Network, ISRN Condensed Matter Physics, 2012, Article ID 184023.

Google Scholar

[13] S. Danis, V. Holy, Z. Zhong, G. Bauer, and O. Ambacher, Applied Physics Letters, vol. 85, no. 7, 2004, p.3065–p.3067.

Google Scholar

[14] Metzger T, Höpler R, Born E, et al. Philosophical magazine A, 1998, 77(4), p.1013-p.1025.

Google Scholar

[15] Mathis S K, Romanov A E, Chen L F, et al. Journal of crystal growth, 2001, 231(3), p.371-p.390.

Google Scholar

[16] Liu J Q, Wang J F, Liu Y F, et al. Journal of Crystal Growth, 2009, 311(10), p.3080-p.3084.

Google Scholar