Effect of Thermal Stress on the Microwave Dielectric Properties of (300-X) nm MgTiO3 /(X) nm CaTiO3 Thin Films

Ki Hyun Yoon; Ji Won Choi

doi:10.4028/www.scientific.net/AST.45.2332

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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 45Effect of Thermal Stress on the Microwave...

Effect of Thermal Stress on the Microwave Dielectric Properties of (300-X) nm MgTiO₃ /(X) nm CaTiO₃ Thin Films

Abstract:

The microwave dielectric properties of (300-X) nm MgTiO3/(X) nm CaTiO3 thin films have been investigated with correlation between the interface and stress induced by dielectric layers with heattreatment. As the thickness (X) of CaTiO3 film increased, the dielectric constant increased and the temperature coefficient of the dielectric constant changed from the positive to the negative values by the dielectric mixing rule. The dielectric loss of (300-X) nm MgTiO3/(X) nm CaTiO3 thin films increased with an increase of the thickness (X) of CaTiO3 film because of higher thermal stress induced by the higher thermal expansion coefficient of CaTiO3 than that of MgTiO3.

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Advances in Science and Technology (Volume 45)

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2332-2336

DOI:

https://doi.org/10.4028/www.scientific.net/AST.45.2332

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Online since:

October 2006

Authors:

Ki Hyun Yoon, Ji Won Choi

Keywords:

Dielectric Layer, Dielectric Loss, Microwave Dielectric, Thermal Stress

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