A High Throughput Search of Dielectric Thin Films for Tunable Devices

Ji Won Choi; Chong Yun Kang; Jin Sang Kim; Seok Jin Yoon; Hyun Jai Kim; R.B. vanDover

doi:10.4028/www.scientific.net/AST.45.2351

Paper Titles

Niobate Complex Perovskite Microwave Dieletric Ceramics Ba(Me_1/3Nb_2/3)O₃ (Me= Zn, Co, Ni and Mg)
p.2323

Effect of Thermal Stress on the Microwave Dielectric Properties of (300-X) nm MgTiO₃ /(X) nm CaTiO₃ Thin Films
p.2332

Microstructural Evolution Model of the Sintering Behaviour and Magnetic Properties of NiZn Ferrite Nanoparticles
p.2337

Giant Dielectric Response in Perovskite-Derivative CaCu₃Ti₄O₁₂ Prepared by Polymerized Complex Method
p.2345

A High Throughput Search of Dielectric Thin Films for Tunable Devices
p.2351

Preparation and Characterization of Indium Tin Oxide for Optical Devices by Chemical Process
p.2355

Silica Additions and the Performance of PTC Thermistors
p.2362

Research on the Fabrication of BaTiO₃-Based PTCR Materials and Thermistors by Polyacrylamide Gel Process
p.2371

Investigation of ZnO Based Thin Films as Resistance Materials with Small Temperature Coefficients
p.2376

HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 45A High Throughput Search of Dielectric Thin Films...

A High Throughput Search of Dielectric Thin Films for Tunable Devices

Abstract:

The dielectric properties of (Ba,Sr)TiO3 (BSTO) and Zr doped BSTO thin films have been investigated to identify candidate thin film dielectric materials having low dielectric loss without degradation of the tunability by continuous composition spread (CCS) technique using off-axis rf magnetron sputtering. The optimized properties of BSTO thin films deposited on Pt/SiO2/Si substrate by CCS were dielectric loss 0.031, tunability 31.5, respectively. The optimized properties of Zr doped BSTO thin films deposited on Pt/SiO2/Si substrate by CCS were improved by dielectric loss 42%, FOM 68% at the same BSTO composition, respectively. To confirm the dielectric properties and compositions by CCS technique, Zr doped BSTO bulk ceramics were evaluated.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advances in Science and Technology (Volume 45)

Pages:

2351-2354

DOI:

https://doi.org/10.4028/www.scientific.net/AST.45.2351

Citation:

Cite this paper

Online since:

October 2006

Authors:

Ji Won Choi, Chong Yun Kang, Jin Sang Kim, Seok Jin Yoon, Hyun Jai Kim, R.B. vanDover

Keywords:

Barium Strontium Titanium Oxide, Dielectric Loss, Dielectric Tunability

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] B. H. Park, E. J. Peterson, Q. X. Jia, J. Lee, X. Zeng, W. Si and X. X. Xi: Appl. Phys. Lett. Vol. 78 (2001), p.533.

Google Scholar

[2] I. Levin, R. D. Leapman and D. L. Kaiser: J. Mater. Res. Vol. 15 (2000), p.1433.

Google Scholar

[3] J. S. Horwitz, W. Chang, A. C. Carter, J. M. Pond, S. W. Kirchoefer, D. B. Christy, J. Levy and C. Hubert: Integr. Ferroelectr. Vol. 22 (1998), p.799.

Google Scholar

[4] M. W. Cole, W. D. Nothwang, C. Hubbard, E. Ngo and M. Ervin: J. Appl. Phys. Vol. 93 (2003), p.9218.

Google Scholar

[5] W. Chang and L. Sengupta: J. Appl. phys. Vol. 92 (2002), p.3941.

Google Scholar

[6] Y. A. Jeon, W. C. Shin, T. S. Seo and S. G. Yoon: J. Mater. Res. Vol. 17 (2002), p.2831.

Google Scholar