A High Throughput Search of Dielectric Thin Films for Tunable Devices

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The dielectric properties of (Ba,Sr)TiO3 (BSTO) and Zr doped BSTO thin films have been investigated to identify candidate thin film dielectric materials having low dielectric loss without degradation of the tunability by continuous composition spread (CCS) technique using off-axis rf magnetron sputtering. The optimized properties of BSTO thin films deposited on Pt/SiO2/Si substrate by CCS were dielectric loss 0.031, tunability 31.5, respectively. The optimized properties of Zr doped BSTO thin films deposited on Pt/SiO2/Si substrate by CCS were improved by dielectric loss 42%, FOM 68% at the same BSTO composition, respectively. To confirm the dielectric properties and compositions by CCS technique, Zr doped BSTO bulk ceramics were evaluated.

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Periodical:

Edited by:

P. VINCENZINI

Pages:

2351-2354

DOI:

10.4028/www.scientific.net/AST.45.2351

Citation:

J. W. Choi et al., "A High Throughput Search of Dielectric Thin Films for Tunable Devices", Advances in Science and Technology, Vol. 45, pp. 2351-2354, 2006

Online since:

October 2006

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$35.00

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