Investigation of ZnO Based Thin Films as Resistance Materials with Small Temperature Coefficients

Yuichi Sato; Makoto Goto; Junji Ikeda; Yusuke Minakawa; Susumu Sato

doi:10.4028/www.scientific.net/AST.45.2376

Paper Titles

A High Throughput Search of Dielectric Thin Films for Tunable Devices
p.2351

Preparation and Characterization of Indium Tin Oxide for Optical Devices by Chemical Process
p.2355

Silica Additions and the Performance of PTC Thermistors
p.2362

Research on the Fabrication of BaTiO₃-Based PTCR Materials and Thermistors by Polyacrylamide Gel Process
p.2371

Investigation of ZnO Based Thin Films as Resistance Materials with Small Temperature Coefficients
p.2376

Gate Materials and Fabrication-Processes of Metal-Ferroelectric-Insulator-Semiconductor Memory FETs with Long Data Retention
p.2382

Nanoscale Ferroelectrics
p.2392

Lead Doping of Wet-Chem. PZT 95/5 for Enhanced Electrical Performance in Ferroelectric Power Supply Applications
p.2400

Fabrication, Microstructure and Mechanical Properties Relations of Ferroelectric Barium Titanate Reinforced with Alumina Micro/Nano Particulates
p.2406

HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 45Investigation of ZnO Based Thin Films as...

Investigation of ZnO Based Thin Films as Resistance Materials with Small Temperature Coefficients

Abstract:

Possibilities of ZnO based thin films for applications as resistance materials with small temperature coefficients are investigated. The ZnO based thin films containing Cu, Mg, Al and In are deposited on sapphire c-face single crystal substrates or quartz glass substrates. Resistivities at room temperature and their temperature dependences of the obtained thin films are measured and discussed.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advances in Science and Technology (Volume 45)

Pages:

2376-2381

DOI:

https://doi.org/10.4028/www.scientific.net/AST.45.2376

Citation:

Cite this paper

Online since:

October 2006

Authors:

Yuichi Sato, Makoto Goto, Junji Ikeda, Yusuke Minakawa, Susumu Sato

Keywords:

Resistivity, Resistor, TCR, Thin Film, Zinc Oxide (ZnO)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] T. Riekkinen, J. Molarius, T. Laurila, A. Nurmela, I. Suni and J. K. Kivilahti: Microelectron. Eng., Vol. 64 (2002), p.289.

DOI: 10.1016/s0167-9317(02)00801-8

Google Scholar

[2] J. Kozlowski, J. Markowski, A. Prajzner and J. Zdanowski: Surf. Coat. Technol., Vol. 98 (1998), p.1440.

Google Scholar

[3] A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. Chichibu and M. Kawasaki: Jpn. J. Appl. Phys. Part 2, Vol. 44 (2005), p. L643.

DOI: 10.1143/jjap.44.l643

Google Scholar

[4] J. Nishi, F. M. Hossain, S. Takagi, T. Aita, K. Saikusa, Y. Ohmaki, I. Ohkubo, S. Kishimoto, A. Ohtomo, T. Fukumura, F. Matsukura, Y. Ohno, H. Koinuma, H. Ohno and M. Kawasaki: Jpn. J. Appl. Phys. Part 2, Vol. 42 (2003), p. L347.

DOI: 10.1143/jjap.42.l347

Google Scholar