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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 45Gate Materials and Fabrication-Processes of...

Gate Materials and Fabrication-Processes of Metal-Ferroelectric-Insulator-Semiconductor Memory FETs with Long Data Retention

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Abstract:

A recently-developed Pt/SrBi2Ta2O9/(HfO2)x(Al2O3)1-x /Si FET (x=0.75) shows outstanding data retention characteristics. The drain current ratio between the on- and off-states is more than 2 x 106 after 12 days, and the decreasing rate of this ratio is so small that the extrapolated ratio after 10 years is larger than 1 ×105. Among various materials researched for this decade, the combination of SrBi2Ta2O9 and (HfO2)x(Al2O3)1-x or Hf-Al-O is regarded as the best choice presently. Device performance by changing the Hf and Al composition ratio is investigated, and an Hf-rich-side region around x = 0.75 is found most suitable. Pure HfO2 (x=1) is also a good candidate, but the gate leakage current increase due to HfO2 crystallization is observed. Very recently, we fabricated a self-aligned gate Pt/SrBi2Ta2O9/Hf-Al-O/Si FET, and measured the retention characteristics for 33.5 day that is the longest period measured so far. This also shows a sufficiently large ratio of 2.4 × 105 after 33.5 day which will be 6.5 × 104 after 10 years by extrapolation. The development of a self-aligned gate FeFET is an inevitable step of FeFET miniaturization according to the LSI scaling rule.

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Advances in Science and Technology (Volume 45)

Pages:

2382-2391

DOI:

https://doi.org/10.4028/www.scientific.net/AST.45.2382

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Online since:

October 2006

Authors:

Shigeki Sakai

Keywords:

FeFET, Ferroelectric Gate FET, Film, Non-Volatile Memory (NVM)

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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