Research on the Fabrication of BaTiO3-Based PTCR Materials and Thermistors by Polyacrylamide Gel Process

Zhi Ping Zheng; Shu Ping Gong; Dong Xiang Zhou

doi:10.4028/www.scientific.net/AST.45.2371

Paper Titles

Giant Dielectric Response in Perovskite-Derivative CaCu₃Ti₄O₁₂ Prepared by Polymerized Complex Method
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A High Throughput Search of Dielectric Thin Films for Tunable Devices
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Preparation and Characterization of Indium Tin Oxide for Optical Devices by Chemical Process
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Silica Additions and the Performance of PTC Thermistors
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Research on the Fabrication of BaTiO₃-Based PTCR Materials and Thermistors by Polyacrylamide Gel Process
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Investigation of ZnO Based Thin Films as Resistance Materials with Small Temperature Coefficients
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Gate Materials and Fabrication-Processes of Metal-Ferroelectric-Insulator-Semiconductor Memory FETs with Long Data Retention
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Nanoscale Ferroelectrics
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Lead Doping of Wet-Chem. PZT 95/5 for Enhanced Electrical Performance in Ferroelectric Power Supply Applications
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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 45Research on the Fabrication of BaTiO3-Based PTCR...

Research on the Fabrication of BaTiO₃-Based PTCR Materials and Thermistors by Polyacrylamide Gel Process

Abstract:

BaTiO3-based powders used for positive temperature coefficient of resistance (PTCR) were synthesized by polyacrylamide gel process. The effect of synthesis conditions such as the pH of the citrate solutions and the reticulation of the polyacrylamide gel on the objection phase was investigated. The results showed that when the citrate solutions had a neutrality pH of 7~8 and the polyacrylamide gel was hard reticulated, precursor powder with pure and completely crystallized objection phase was obtained at calcination temperature of more than 700°C. The results of XRD and TEM revealed that precursor powder had an average grain size of about 50 nm. Compared with those prepared by solid-state reaction, PTCR ceramics prepared by polyacrylamide gel process have one magnitude higher ratio of maximum to minimum of resistance and low sintering temperature, which provides a practical and theoretical foundation for preparing multilayer PTCR thermistors by co-firing of semiconducting BaTiO3 ceramics and electrode.