Pathways towards P-Type Oxide Layers for Optoelectronic Applications

Bernd Szyszka; Christina Polenzky; Peer Loebmann; Stefan Goetzendoerfer; Christian Elsaesser; Wolfgang Koerner

doi:10.4028/www.scientific.net/AST.75.16

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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 75Pathways towards P-Type Oxide Layers for...

Pathways towards P-Type Oxide Layers for Optoelectronic Applications

Abstract:

State of the art optoelectronic applications such as thin film solar cells, flat panel displays, and light emitting diodes suffer from the non-availability of p-type oxide materials on the industrial scale. Novel technologies such as transparent electronics, UV light emitting diodes, and improved thin film solar cells using wide band gap p-type oxide layers as front contact will be available once p-type oxide layers with proper layer and interface properties can be obtained on an industrial scale. In this paper, we report on our progress towards p-type oxide layers for industrial applications. We address the first principles density functional theory modeling of ZnO based layers where a pathway towards p-conductivity is seen taking the nitrogen doping of grain boundaries into account. The second part of the paper is on the synthesis of p-type Delafossite layers such as CuCr1-xAlxO2:Mg by Sol-Gel and CuCrO2 by hollow cathodes gas flow sputtering. We report on the deposition processes and film properties obtained. Both methods reveal p-type conductivity by means of Seebeck-coefficient measurements.

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Periodical:

Advances in Science and Technology (Volume 75)

Pages:

16-24

DOI:

https://doi.org/10.4028/www.scientific.net/AST.75.16

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Online since:

October 2010

Authors:

Bernd Szyszka, Christina Polenzky, Peer Loebmann, Stefan Goetzendoerfer, Christian Elsaesser, Wolfgang Koerner

Keywords:

First Principles Density Functional Theory, Hollow Cathode Gas Flow Sputtering, P-Type Oxide, Seebeck Measurement, Sol-Gel Route

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