The Synthesis of In-Se by Vapor Transport Method

Naoki Takano; Hitoshi Kohri; Takayoshi Yagasaki

doi:10.4028/www.scientific.net/AST.77.291

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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 77The Synthesis of In-Se by Vapor Transport Method

The Synthesis of In-Se by Vapor Transport Method

Abstract:

The α and β phases of In₂Se₃ are attractive thermophotovolβtaic (TPV) materials. For example, they have a direct transition and an optimal bandgap for TPV systems. We investigated about the influence of the growth conditions on the crystal forms of In-Se prepared by vapor transport. Firstly, only bulk In₂Se₃ was encapsulated in a quartz ampoule and crystals were grown by vapor transport. Hollow hexagonal cylinders that were approximately 10 μm in diagonal dimension were obtained. They were identified as a mixed phase of In₂Se₃ by XRD. Secondly, the deposition surface configuration was varied by using an ampoule with a smaller internal diameter and a silicon oxide substrate. Hollow hexagonal cylinders that were approximately 20 μm in diagonal dimension were obtained on the inner wall of the ampoule with a smaller internal diameter. Solid hexagonal crystals of approximately 10 μm in diagonal dimension grew perpendicular to the silicon oxide substrate, whereas hollow hexagonal cylinders grew on the inner wall of the ampoule. Finally, the surface energy of the deposition surface was varied for silicon substrate. Nanoparticles with diameters of approximately 50 nm were sparsely deposited on the textured silicon surface.