Paper Titles

Electric Field Induced Electron Emission from Deep Level Center in GaAs
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Generation of the El2 Defect in n-GaAs Irradiated by High Energy Protons
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Synergetic Photoelectric Phenomena Induced by Associations of Rare-Earth Metal Impurities with Lattice Defects in Si and Semiconductors of Type A₃B₅ and A₂B₆
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Peculiarities of Display of Multistable Defects in Relaxation Spectroscopy
p.125

Spectroscopy of II-VI Compounds Doped with Transition-Metal Ions
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Photoionization of the Impurity Ion in ZnS:Fe: Influence of Lattice Relaxation
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Vibronic Interaction and Luminescence of ZnSe:Cr
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Quenching Centers of Red Luminescence in ZnSe:Te
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Dynamics of Electron-Phonon Interaction in ZnSe:Cr Crystals under Photoexcitation in Charge Transfer Band
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 103-105Spectroscopy of II-VI Compounds Doped with...

Spectroscopy of II-VI Compounds Doped with Transition-Metal Ions

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Defects in Semiconductors I

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Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Pages:

133-142

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.103-105.133

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Online since:

January 1993

Authors:

Alexandr I. Ryskin

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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