Paper Titles

Generation of the El2 Defect in n-GaAs Irradiated by High Energy Protons
p.111

Synergetic Photoelectric Phenomena Induced by Associations of Rare-Earth Metal Impurities with Lattice Defects in Si and Semiconductors of Type A₃B₅ and A₂B₆
p.119

Peculiarities of Display of Multistable Defects in Relaxation Spectroscopy
p.125

Spectroscopy of II-VI Compounds Doped with Transition-Metal Ions
p.133

Photoionization of the Impurity Ion in ZnS:Fe: Influence of Lattice Relaxation
p.143

Vibronic Interaction and Luminescence of ZnSe:Cr
p.149

Quenching Centers of Red Luminescence in ZnSe:Te
p.157

Dynamics of Electron-Phonon Interaction in ZnSe:Cr Crystals under Photoexcitation in Charge Transfer Band
p.163

Nonlinear Spectroscopy of DA-Centers of Green-Edge-Luminescence in CdS Crystals. Stepwise Exciton Localization by Isoelectronic Defects
p.169

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 103-105Photoionization of the Impurity Ion in ZnS:Fe:...

Photoionization of the Impurity Ion in ZnS:Fe: Influence of Lattice Relaxation

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors I

Info:

Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Pages:

143-148

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.103-105.143

Citation:

Cite this paper

Online since:

January 1993

Authors:

Yu.B. Rosenfeld, Alexandr I. Ryskin, A.V. Vasil'ev, G.M. Zinger

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: