3D-4D-5D Transition and 4f Rare Earth Elements in III-V and II-VI Semiconductors as Luminescent Centres and Probes in Diagnostics of Implanted Layers

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Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Edited by:

Nickolay T. Bagraev

Pages:

25-30

DOI:

10.4028/www.scientific.net/DDF.103-105.25

Citation:

V.V. Ushakov and A.A. Gippius, "3D-4D-5D Transition and 4f Rare Earth Elements in III-V and II-VI Semiconductors as Luminescent Centres and Probes in Diagnostics of Implanted Layers", Defect and Diffusion Forum, Vols. 103-105, pp. 25-30, 1993

Online since:

January 1993

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$35.00

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