Anisotropic Acceptors Induced In GaAs by Group I Elements Cu, Ag, Au: Properties and Trends
p.13
p.13
3D-4D-5D Transition and 4f Rare Earth Elements in III-V and II-VI Semiconductors as Luminescent Centres and Probes in Diagnostics of Implanted Layers
p.25
p.25
Symmetry of VGaTeAs Complex in GaAs and its Reorientation at Low Temperature
p.31
p.31
Electrodipole Spin Transitions of the Neutral Manganese Acceptor Mn°Ga in Gallium Arsenide
p.39
p.39
On the Ground State of Mn Ga Defects in a GaAs: Mn System
p.45
p.45
Defect-Impurity Interaction in Irradiated n-GaAs
p.51
p.51
Long-Range Effect of Ion Irradiation on the System of Defects in Indium Phosphide
p.57
p.57
Phonon-Impurity Photoconductivity Due to Ge Acceptor in GaAs1-xSbx Alloys
p.61
p.61
The El2 Center in GaAs: Symmetry and Metastability
p.67
p.67
On the Ground State of Mn Ga Defects in a GaAs: Mn System
Abstract:
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Periodical:
Defect and Diffusion Forum (Volumes 103-105)
Pages:
45-50
Citation:
Online since:
January 1993
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© 1993 Trans Tech Publications Ltd. All Rights Reserved
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