Paper Titles

On the Ground State of Mn _Ga Defects in a GaAs: Mn System
p.45

Defect-Impurity Interaction in Irradiated n-GaAs
p.51

Long-Range Effect of Ion Irradiation on the System of Defects in Indium Phosphide
p.57

Phonon-Impurity Photoconductivity Due to Ge Acceptor in GaAs_1-xSb_x Alloys
p.61

The El2 Center in GaAs: Symmetry and Metastability
p.67

Metastable Electronic States Caused by Native Defects and III-d Group Impurities in A⁴B⁶ Semiconductors
p.85

Electric Field Induced Electron Emission from Deep Level Center in GaAs
p.105

Generation of the El2 Defect in n-GaAs Irradiated by High Energy Protons
p.111

Synergetic Photoelectric Phenomena Induced by Associations of Rare-Earth Metal Impurities with Lattice Defects in Si and Semiconductors of Type A₃B₅ and A₂B₆
p.119

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 103-105The El2 Center in GaAs: Symmetry and Metastability

The El2 Center in GaAs: Symmetry and Metastability

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors I

Info:

Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Pages:

67-84

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.103-105.67

Citation:

Cite this paper

Online since:

January 1993

Authors:

Nikolai T. Bagraev

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: