Method and Model for Treating Negative-U Centers in Silicon: Si:Vo and Si:(VH3)-

Abstract:

Article Preview

Info:

Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Edited by:

Nickolay T. Bagraev

Pages:

349-366

DOI:

10.4028/www.scientific.net/DDF.103-105.349

Citation:

S.S. Moliver "Method and Model for Treating Negative-U Centers in Silicon: Si:Vo and Si:(VH3)- ", Defect and Diffusion Forum, Vols. 103-105, pp. 349-366, 1993

Online since:

January 1993

Authors:

Export:

Price:

$35.00

In order to see related information, you need to Login.