Paper Titles

The Influence of Current Carriers on Shallow Impurity Limited Solubility in Semiconductors
p.329

New Shape of Inhomogeneously Broadened Resonance Lines in Semi-Infinite Media: Luminescence of Sm²⁺ Ions in Thin Epitaxial CaF₂ Films on Si (111)
p.335

Hopping Conductivity of Ion-Implanted by Sulphur Silicon
p.341

Method and Model for Treating Negative-U Centers in Silicon: Si:V^o and Si:(VH₃)^-
p.349

Zn-Related Center in Silicon: Negative-U Properties
p.367

Resonance (Quasilocal) States in A^IVB^VI Semiconductors
p.387

Superconductivity in IV-VI Semiconductors Induced by Impurity Resonance States
p.407

The Self-Comensation of Electrical Active Impurity by Intrinsic Defects in Solid Solutions Pb_0.8Sn_0.2Te and PB_0.93Sn_0.07Se
p.417

Tunnel Spectroscopy of Resonance and Metastable Impurity States in Lead Telluride
p.421

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 103-105Zn-Related Center in Silicon: Negative-U...

Zn-Related Center in Silicon: Negative-U Properties

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors I

Info:

Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Pages:

367-386

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.103-105.367

Citation:

Cite this paper

Online since:

January 1993

Authors:

Nikolai T. Bagraev, Igor S. Polovtsev

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: