Paper Titles

Surface Coulomb Traps
p.603

Impurity Polarizability in Silicon Due to the Magnetic Degeneracy of Donor States in a Finite Magnetic Field
p.611

New Ideas Concerning the Nitrogen Donor States in Noncubic SiC Basing on the High-Resolution EPR Data
p.619

Definition of the Off-Center Positions Coordinates of Boron in 6H SiC from High-Resolution EPR Spectra
p.627

EPR and DLTS of Point Defects in Silicon Carbide Crystals
p.633

Electronic Structure of Boron in Silicon Carbide
p.645

EPR of the Antisite Defect in Epitaxial Layers of 4H SiC
p.655

Electron Structure of ¹¹B Impurity in 6H SiC Crystal Measured by Endor
p.661

Models of Impurity Boron in Various SiC Polytypes
p.667

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 103-105EPR and DLTS of Point Defects in Silicon Carbide...

EPR and DLTS of Point Defects in Silicon Carbide Crystals

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Defects in Semiconductors I

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Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Pages:

633-644

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.103-105.633

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Online since:

January 1993

Authors:

V.A. Il'in, V.S. Ballandovich

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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