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Impurity Polarizability in Silicon Due to the Magnetic Degeneracy of Donor States in a Finite Magnetic Field
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EPR and DLTS of Point Defects in Silicon Carbide Crystals
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Electronic Structure of Boron in Silicon Carbide
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EPR of the Antisite Defect in Epitaxial Layers of 4H SiC
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Electron Structure of ¹¹B Impurity in 6H SiC Crystal Measured by Endor
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Models of Impurity Boron in Various SiC Polytypes
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Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 103-105Electron Structure of 11B Impurity in 6H SiC...

Electron Structure of ¹¹B Impurity in 6H SiC Crystal Measured by Endor

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Defects in Semiconductors I

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Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Pages:

661-666

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.103-105.661

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Online since:

January 1993

Authors:

T.L. Petrenko, V.V. Teslenko, E.N. Mokhov

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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