Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres

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Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Edited by:

Nickolay T. Bagraev

Pages:

673-0

DOI:

10.4028/www.scientific.net/DDF.103-105.673

Citation:

M.M. Anikin et al., "Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres", Defect and Diffusion Forum, Vols. 103-105, pp. 673-0, 1993

Online since:

January 1993

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$35.00

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