Paper Titles

Impurity Polarizability in Silicon Due to the Magnetic Degeneracy of Donor States in a Finite Magnetic Field
p.611

New Ideas Concerning the Nitrogen Donor States in Noncubic SiC Basing on the High-Resolution EPR Data
p.619

Definition of the Off-Center Positions Coordinates of Boron in 6H SiC from High-Resolution EPR Spectra
p.627

EPR and DLTS of Point Defects in Silicon Carbide Crystals
p.633

Electronic Structure of Boron in Silicon Carbide
p.645

EPR of the Antisite Defect in Epitaxial Layers of 4H SiC
p.655

Electron Structure of ¹¹B Impurity in 6H SiC Crystal Measured by Endor
p.661

Models of Impurity Boron in Various SiC Polytypes
p.667

Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres
p.673

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 103-105Radiative and Radiationless Recombination...

Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres

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Defects in Semiconductors I

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Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Pages:

673-0

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.103-105.673

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Online since:

January 1993

Authors:

M.M. Anikin, Alexander A. Lebedev, Anatoly M. Strel'chuk

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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