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Abstracts
Dynamic Transitions in Correlated Driven Diffusion in a Periodic Potential
a.439
Discrete-Time Methods for the Transport of Foreign Atoms in Semiconductors
a.440
Electromigration, Effect of Grain-Boundary Diffusion Anisotropy upon Via Electromigration Failure
a.441
Effects of Grain Structure and Grain Growth upon Electromigration
a.442
Physical Metallurgy of Electromigration
a.443
Point Defects, Cell Model for Interstitials in Binary Substitutional Solutions
a.444
Theory of Huang X-Ray Scattering Caused by Point Defects
a.445
Tight-Binding Molecular Dynamics Simulations of Semiconductor Alloys
a.446
Elastic Force on a Point Defect in or Near to a Surface Layer
a.447
HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 150-151Physical Metallurgy of Electromigration

Physical Metallurgy of Electromigration

Page: A443

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