Abstracts

GaN/Al₂O₃: Dislocations
a.330

GaN/GaAs: Dislocations and Stacking Faults
a.331

GaN/InGaN: Interdiffusion
a.332

GaN/SiC: Ion Implantation and Point Defects
a.333

GaN/SiC: Dislocations, Grain Boundaries, and Stacking Faults
a.334

SiN_x: Point Defects and Defect Annealing
a.335

Si(O,N): Point Defects
a.336

TaSiN: O Diffusion
a.337

Ti(C,N): Twins
a.338

HomeDefect and Diffusion ForumDefects and Diffusion in CeramicsGaN/SiC: Dislocations, Grain Boundaries, and...

GaN/SiC: Dislocations, Grain Boundaries, and Stacking Faults

Page: A334