Abstracts

GaN/InGaN: Interdiffusion
a.332

GaN/SiC: Ion Implantation and Point Defects
a.333

GaN/SiC: Dislocations, Grain Boundaries, and Stacking Faults
a.334

SiN_x: Point Defects and Defect Annealing
a.335

Si(O,N): Point Defects
a.336

TaSiN: O Diffusion
a.337

Ti(C,N): Twins
a.338

TiN/B-C-N: Interdiffusion and Ion Bombardment
a.339

WSiN: P Diffusion
a.340

HomeDefect and Diffusion ForumDefects and Diffusion in CeramicsSi(O,N): Point Defects

Si(O,N): Point Defects

Page: A336