GaN/SiC: Ion Implantation and Point Defects
a.333
a.333
GaN/SiC: Dislocations, Grain Boundaries, and Stacking Faults
a.334
a.334
SiNx: Point Defects and Defect Annealing
a.335
a.335
Si(O,N): Point Defects
a.336
a.336
TaSiN: O Diffusion
a.337
a.337
Ti(C,N): Twins
a.338
a.338
TiN/B-C-N: Interdiffusion and Ion Bombardment
a.339
a.339
WSiN: P Diffusion
a.340
a.340
Ca5(PO4)3OH: Grain Boundaries
a.341
a.341
TaSiN: O Diffusion
Page: A337