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Abstracts
Deformation-Twin Characterization Using Electron Back-Scattering
a.765
Local Migration of Grain Boundaries in Polycrystalline Materials
a.766
Changes in Grain Boundary Misorientation Caused by Dislocation Emission
a.767
Local Melting of Grain Boundaries Containing Impurity Atom Clusters
a.768
Stacking Faults and the Non-Equilibrium fcc → 18R1 Transformation
a.769
Grain Boundary Sliding and Deformation in Nanocrystalline Materials
a.770
Combination Rule for Deviant CSL Grain Boundaries at Triple Junctions
a.771
Solute Segregation and Drag Force at Grain Boundaries
a.772
Defects as Materials between the Elements of the Periodic Table
a.773
HomeDefect and Diffusion ForumDefects and Diffusion in Semiconductors VIStacking Faults and the Non-Equilibrium fcc → 18R1...

Stacking Faults and the Non-Equilibrium fcc → 18R1 Transformation

Page: A769

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