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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 226-228Investigation of the Diffusion Behavior near Grain...

Investigation of the Diffusion Behavior near Grain Boundaries for Control of the Electrical Features of Semiconducting Oxides

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Defects and Diffusion in Ceramics VI

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Periodical:

Defect and Diffusion Forum (Volumes 226-228)

Pages:

191-196

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.226-228.191

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Online since:

May 2004

Authors:

Myung Beom Park, Nam Hee Cho

Keywords:

Diffusion Behavior, Grain Boundary, Potential Barrier Height, SrTiO₃

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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