The Chemical Diffusion Coefficient of the Hydrogen Ion in Iridium Oxide Films

[7] J. Hendrikse, W. Olthuis and P. Bergvcld, Sensors and Actuators B, 53 (1998), 97. (Dr) David J.Fisher Scitec Publications 27 Elderberry Road, Cardiff CF5 3RG, UK Dear Editor, Please find enclosed the original my manuscript entitled "The chemical diffusion coefficient of hydrogen ion in iridium oxide films", for possible publication in the Defects and Diffusion in Ceramics - Annual Retrospective 2004 Defect and Diffusion Forum Scitec Publications. In this study, a novel method based on voltage-pH response measurement was used to determine the chemical diffusion coefficient of hydrogen ion in iridium oxide films. The chemical diffusion coefficient of hydrogen ion in iridium oxide films obtained from this method was 4×10 -12 cm2/sec. The unique feature of the voltage-pH response method is its relatively simple experimental procedure, which eliminates complications arising from surface related effects and/or presence of hydrogen traps in membrane such as those found in the electrochemical permeation method. The author understands that should the submitted material be accepted for publication in the journal, they will automatically transfer the copyright to the publisher. I hope that the reviewing process finds the manuscript acceptable for publication in the Defects and Diffusion in Ceramics - Annual Retrospective 2004 Defect and Diffusion Forum Scitec Publications. Best regards, George Yu, PH. D. Department of Material Science and Engineering National Huwei Institute of Technology P.O. Box 49, Huwei, Yuenlin, Taiwan 63201 TEL: +886-5-6337183; FAX: +886-5-6328863 Email: gwyu@nhit.edu.tw metal@cltv.tinp.net.tw

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