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Abstracts
Grain Boundary Dislocation Pile-Ups in Nano- and Polycrystalline Materials
a.751
Grain-Boundary Dislocations and Enhanced Diffusion
a.752
Disorder Processes in A3+B3+O3 Compounds
a.753
Defects Induced by γ-Rays and Pulsed X-Rays in Optical Fibers
a.754
Electron Beam Doping of Semiconductors by Superdiffusion
a.755
Glissile Interstitial Clusters and Self-Organization in Irradiated Materials
a.756
Elimination of Irradiation Point Defects from Crystalline Solids
a.757
γ-Radiation and the Annealing of Radiation Defects in MOS Structures
a.758
Bombardment-Induced Post-Cascade Redistribution of Point Defects
a.759
HomeDefect and Diffusion ForumDefects and Diffusion in Ceramics VIElectron Beam Doping of Semiconductors by...

Electron Beam Doping of Semiconductors by Superdiffusion

Page: A755

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