Electron Beam Doping of Semiconductors by Superdiffusion
a.755
a.755
Glissile Interstitial Clusters and Self-Organization in Irradiated Materials
a.756
a.756
Elimination of Irradiation Point Defects from Crystalline Solids
a.757
a.757
γ-Radiation and the Annealing of Radiation Defects in MOS Structures
a.758
a.758
Bombardment-Induced Post-Cascade Redistribution of Point Defects
a.759
a.759
Motion of Interstitial Defects in Irradiated Materials
a.760
a.760
Grain Boundary Structural Changes under Electron Irradiation
a.761
a.761
Migration of Laser-Induced Point Defects in IV–VI Compounds
a.762
a.762
Model for Nearly Constant Loss in Ionic Conductors
a.763
a.763
Bombardment-Induced Post-Cascade Redistribution of Point Defects
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