The Role of Intrinsic Defects for the Diffusion of Ag and Cu in CdTe

Herbert Wolf; F. Wagner; Th. Wichert

doi:10.4028/www.scientific.net/DDF.237-240.491

Paper Titles

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Nitrogen Tracer Diffusion in Yttria Doped Zirconium Oxonitride
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Diffusion of ⁶Li in Tantalum and Tungsten Studied by the Neutron Depth Profiling Technique
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The Role of Intrinsic Defects for the Diffusion of Ag and Cu in CdTe
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Grain Boundary Segregation Versus Precipitation in Grains. Effect on Diffusion
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Nitrogen Self-Diffusion in Polycrystalline Si₃N₄ Films: Isotope Heterostructures vs. Gas-Exchange
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Stress Development and Relaxation during Reaction of a Cobalt Film with a Silicon Substrate
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 237-240The Role of Intrinsic Defects for the Diffusion of...

The Role of Intrinsic Defects for the Diffusion of Ag and Cu in CdTe

Abstract:

Ag and Cu diffused into CdTe exhibit unusual shapes of their concentration profiles, especially if the diffusion was performed under Cd vapor pressure. The shapes of the concentration profiles at low concentrations of Ag or Cu are well described by a model based on the interaction with intrinsic defects. In that model the characteristic features of the profiles can be independently reproduced by appropriate parameters. It turns out that the resulting profiles are determined by the diffusion of interstitial Cd atoms and reflect the actual distribution of the intrinsic defects in the crystal, i.e. the deviation from stoichiometry.