Theoretical base for non-destructive diffusion parameters determination technique in solids taking into account the dopant flux from the sample surface is presented. Diffusion of the nitrogen implanted in the tungsten single crystals was determined in temperature range 700–820°C. Surface concentration of nitrogen was obtained by Auger electron spectroscopy. Initial distribution of the nitrogen in subsurface region was measured by secondary-ion mass-spectroscopy. Two dopant atom fluxes found in subsurface region of the ion-implanted material are supposed to connect with the radiation damages and with the bulk diffusion mechanism.