Interfacial Interaction and Diffusion in Binary Systems

Vasil I. Dybkov

doi:10.4028/www.scientific.net/DDF.263.75

Paper Titles

Self-Diffusion in Covalent Amorphous Solids – A Comparative Study Using Neutron Reflectometry and SIMS
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Spatially Periodic Formation of Nanoparticles in Metal-Doped Glasses
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Atomic Motion and Diffusion Mechanism of Hydrogen in Amorphous Ceramics of the System Si-B-C-N
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NGR Investigation of Grain-Boundary Diffusion in Poly- and Nanocrystalline Nb
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Interfacial Interaction and Diffusion in Binary Systems
p.75

Collective and Tracer Diffusion via a Defect Cluster in LSGM
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Mechanism and Kinetics of Plasma Nitriding of the Nb-Alloyed PM Tool Steel
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Effect of Fe Addition on Ordering Kinetics in Ni₃Al_1-xFe_x System. Monte Carlo Simulation
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The Thermodynamic Database for the Development of Modern Lead-Free Solders
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Interfacial Interaction and Diffusion in Binary Systems

Abstract:

A physico-chemical consideration of the interfacial interaction and diffusion resulting in the formation of chemical compound layers at the interface of initial substances A and B is presented. The layer-growth kinetics is shown to be much more complicated than it follows from conventional diffusional views neglecting interfacial reactions. In the majority of multiphase binary systems, layer occurrence appears to be sequential rather than simultaneous. Under conditions of diffusion control, the number of simultaneously growing compound layers at the A–B interface cannot exceed two. Multiple layers (three and more) can only form as a result of secondary processes connected with the rupture of a diffusion couple. In such cases, great care is necessary when calculating diffusion coefficients to avoid obtaining their physically meaningless values.

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Periodical:

Defect and Diffusion Forum (Volume 263)

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75-80

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.263.75

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Online since:

March 2007

Authors:

Vasil I. Dybkov

Keywords:

Binary Systems, Compound Layer, Diffusion, Growth Kinetic, Interfacial Interaction, Sequence of Occurrence

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