New Method to Determine Young’s Modulus of Micro Crystal Based on Raman Spectrometer

Sheng Bo Sang

doi:10.4028/www.scientific.net/DDF.272.1

Paper Titles

New Method to Determine Young’s Modulus of Micro Crystal Based on Raman Spectrometer
p.1

Change of Properties of CMOS Image Sensor Irradiated with 9 and 16 MeV Protons
p.7

Solid-State Reaction in Al-Fe Binary System Induced by Mechanical Alloying
p.15

Thermal Behaviour of Xenon in a Refractory Metal for Gas Fast Reactor Fuel Elements
p.25

Solid-Phase Diffusion Interaction in Multilayer Thin-Film System Cr/Cu/Ni at Pulse Laser Heating
p.31

Molecular Dynamics Simulation of Brittle Fracture in Bcc Iron
p.41

Diffusion in the AlMo₃ Ordered Intermetallic
p.51

First-Principles Investigation of the Alloying Effect of Mn and Cr in the Kink on the Edge Dislocation in BCC Iron
p.61

Mathematical Modeling of Interface Movement during Diffusional Bonding of Surfaces
p.71

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New Method to Determine Young’s Modulus of Micro Crystal Based on Raman Spectrometer

Abstract:

With the development of MEMS, the mechanical properties of micro crystals must to be determined to know the defect, reliability and characterization of MEMS. Young’s modulus is one of the most important properties, which indicates the ability of resisting the elastic deformation. Many methods, such as natural frequency measurement, beam bending tests, membrane bulge test and uniaxial tension test, have been used to measure Young’s modulus of Si, SiN and metals. But there are some limitations when they are used to measure micro crystals in MEMS. This paper puts forward a high accuracy and convenient method----using Raman spectrum to measure Young’s modulus of micro crystals in MEMS, and sets up the measurement system. Measured Young’s modulus of Si and GaAs in [100] crystallographic orientation are 161.113GPa and 84.128GPa respectively, which correspond with the Yong’s modulus in common use now. Based on the values, it can be analyzed if there are some defects in the micro crystals.