Change of Properties of CMOS Image Sensor Irradiated with 9 and 16 MeV Protons

Xiang Ti Meng; Qiang Huang; Xing Yu Wang; Yong Nan Zheng; Ping Fan; Sheng Yun Zhu

doi:10.4028/www.scientific.net/DDF.272.7

Paper Titles

New Method to Determine Young’s Modulus of Micro Crystal Based on Raman Spectrometer
p.1

Change of Properties of CMOS Image Sensor Irradiated with 9 and 16 MeV Protons
p.7

Solid-State Reaction in Al-Fe Binary System Induced by Mechanical Alloying
p.15

Thermal Behaviour of Xenon in a Refractory Metal for Gas Fast Reactor Fuel Elements
p.25

Solid-Phase Diffusion Interaction in Multilayer Thin-Film System Cr/Cu/Ni at Pulse Laser Heating
p.31

Molecular Dynamics Simulation of Brittle Fracture in Bcc Iron
p.41

Diffusion in the AlMo₃ Ordered Intermetallic
p.51

First-Principles Investigation of the Alloying Effect of Mn and Cr in the Kink on the Edge Dislocation in BCC Iron
p.61

Mathematical Modeling of Interface Movement during Diffusional Bonding of Surfaces
p.71

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Change of Properties of CMOS Image Sensor Irradiated with 9 and 16 MeV Protons

Abstract:

The 9 and 16 MeV proton irradiations of CMOS Image Sensor in the fluence range from 5x108 to 4x1010 cm-2 and 5x109 to 1x1013 cm-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 16 MeV protons are about 4x1010 and 5x1012cm-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.