Change of Properties of CMOS Image Sensor Irradiated with 9 and 16 MeV Protons
The 9 and 16 MeV proton irradiations of CMOS Image Sensor in the fluence range from 5x108 to 4x1010 cm-2 and 5x109 to 1x1013 cm-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 16 MeV protons are about 4x1010 and 5x1012cm-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.
D. J. Fisher
X. T. Meng et al., "Change of Properties of CMOS Image Sensor Irradiated with 9 and 16 MeV Protons", Defect and Diffusion Forum, Vol. 272, pp. 7-14, 2007