Change of Properties of CMOS Image Sensor Irradiated with 9 and 16 MeV Protons

Abstract:

Article Preview

The 9 and 16 MeV proton irradiations of CMOS Image Sensor in the fluence range from 5x108 to 4x1010 cm-2 and 5x109 to 1x1013 cm-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 16 MeV protons are about 4x1010 and 5x1012cm-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.

Info:

Periodical:

Edited by:

D. J. Fisher

Pages:

7-14

DOI:

10.4028/www.scientific.net/DDF.272.7

Citation:

X. T. Meng et al., "Change of Properties of CMOS Image Sensor Irradiated with 9 and 16 MeV Protons", Defect and Diffusion Forum, Vol. 272, pp. 7-14, 2007

Online since:

March 2008

Export:

Price:

$35.00

In order to see related information, you need to Login.